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参数资料
| 型号： | MRF1001A |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | M246, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 200K |
| 代理商： | MRF1001A |
MSC1311.PDF 10-25-99
MRF1001A
DESCRIPTION
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
20
30
3.5
200
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25oC
Derate above 25oC
1.0
5.71
Watts
mW/ o
C
1. Emitter
2. Base
3. Collector
TO-39
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
G
U max
= 11.5 dB (typ) @ 300 MHz, 14v, 90mA
|S
21
|
2
= 11 dB (typ) @ 300 MHz, 14v, 90mA
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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| MRF1002 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
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| MRF10031 | 功能描述:射频双极电源晶体管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF1004 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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