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参数资料
| 型号： | MRF1004MB |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PILL, 4 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 0K |
| 代理商： | MRF1004MB |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 5.0 mA
50
V
BVCEO
IC = 5.0 mA
20
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 35 V
0.5
mA
hFE
VCE = 5.0 V
IC = 75 mA
10
100
---
PG
ηηηη
C
VCC = 35 V
POUT = 4.0 W
f = 1090 MHz
10
40
11
45
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1004MB
DESCRIPTION:
The ASI MRF1004MB is Designed for
Class B and C, TACAN, IFF, and DME
Applications up to 1090 MHz.
FEATURES:
Class B and C Operation
Common Base
P
G = 10 dB at 4.0 W/1090 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
250 mA
VCE
20 V
PDISS
7.0 W @ TC = 25°C
TJ
-65
OC to +200 °C
TSTG
-65
OC to +150 °C
θθθθ
JC
25.0
OC/W
PACKAGE STYLE .280 4L PILL
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
B
C
E
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