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参数资料
| 型号： | MRF134-39 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-39 |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 43K |
| 代理商： | MRF134-39 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVDSS
IDS = 5.0 mA
65
V
IDSS
VDS = 28 V
VGS = 0 V
1.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
A
VGS(th)
ID = 10 mA
VDS = 10 V
1.0
6.0
V
gfs
ID = 100 mA
VDS = 10 V
.08
0.11
mho
Ciss
Coss
Crss
VGS = 28 V
VDS = 0 V
f = 1.0 MHz
7.0
9.7
2.3
pF
PG
η
D
VDD = 28 V
IDQ = 50 mA
Pout = 5.0 W
PIN = 0.39 W
f = 150 MHz
11
50
14
55
dB
%
NF
ID = 28 V
VDS = 28 V
f = 150 MHz
2.0
dB
VHF POWER MOSFET
N-Channel Enhancement Mode
MRF134-39
PACKAGE STYLE TO-39
1 = Drain 2 = Gate 3 = Source
COMMON SOURCE CONFIGURATION
BOTTOM VIEW
DESCRIPTION:
The
ASI MRF134-39 is intended for
use in 28 VDC large signal
Applications, from 2.0 to 400 MHz.
FEATURES INCLUDE:
P
G = 14 dB Typical at 150 MHz
Omnigold Metalization System
Class-A or AB
MAXIMUM RATINGS
ID
0.9 A
VDSS
65 V
VDGR
65 V
VGS
±40 V
PDISS
17.5 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
10 °C/W
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