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| 型号： | MRF1513NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 472K |
| 描述： | MOSFET RF N-CH PLD-1.5 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 520MHz |
| 增益： | 15dB |
| 电压 - 测试： | 12.5V |
| 额定电流： | 2A |
| 电流 - 测试： | 50mA |
| 功率 - 输出： | 3W |
| 电压 - 额定： | 40V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF1513NT1DKR |
MRF1513NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
?
Specified Performance @ 520 MHz, 12.5 Volts
Output Power ? 3 Watts
Power Gain ? 15 dB
Efficiency ? 65%
?
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Features
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal
Impedance Parameters
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current ? Continuous
ID
2
Adc
Total Device Dissipation @ TC
= 25
°C (1)
Derate above 25°C
PD
31.25
0.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
RθJC
4
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. Calculated based on the formula PD
=
TJ?TC
RθJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1513N
Rev. 12, 6/2009
Freescale Semiconductor
Technical Data
MRF1513NT1
520 MHz, 3 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
?
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
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| MRF1517NT1 | MOSFET RF N-CH PLD-1.5 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1513NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1_0806 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1-CUT TAPE | 制造商:Freescale 功能描述:MRF1513NT1 Series 520 MHz 3 W 12.5 V Lateral N-Ch Broadband RF Power Mosfet |
| MRF1513T1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF1517N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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