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参数资料
| 型号： | MRF1535NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/19页 |
| 文件大小： | 658K |
| 描述： | IC MOSFET RF N-CHAN TO272-6 WRAP |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 520MHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 12.5V |
| 额定电流： | 6A |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 40V |
| 封装/外壳： | TO-272AA |
| 供应商设备封装： | TO-272-6 |
| 包装： | 标准包装 |
| 其它名称： | MRF1535NT1DKR |
MRF1535NT1 MRF1535FNT1
11
RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, ?Impedance
Matching Networks Applied to RF Power Transistors.?
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two-port stability analysis with this device?s
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, ?RF Small-Signal Design
Using Two-Port Parameters? for a discussion of two port
network theory and stability.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1550FNT1 | IC MOSFET RF N-CHAN TO272-6 |
| MRF1570NT1 | IC MOSFET RF N-CHAN TO272-8 WRAP |
| MRF18030ALSR3 | IC MOSFET RF N-CHAN NI-400S |
| MRF18060ALR3 | IC MOSFET RF N-CHAN NI-780 |
| MRF18085ALSR5 | IC MOSFET RF N-CHAN NI-780S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1535NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF1535NT1_0806 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF154 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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