参数资料
型号: MRF1550FNT1
厂商: Freescale Semiconductor
文件页数: 11/18页
文件大小: 461K
描述: IC MOSFET RF N-CHAN TO272-6
标准包装: 500
晶体管类型: LDMOS
频率: 175MHz
增益: 14.5dB
电压 - 测试: 12.5V
额定电流: 12A
电流 - 测试: 500mA
功率 - 输出: 50W
电压 - 额定: 40V
封装/外壳: TO-272BA
供应商设备封装: TO-272-6 绕接
包装: 带卷 (TR)
2
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS
= 60 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 10 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
0.5
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 12.5 Vdc, I
D
= 800
μA)
VGS(th)
1
?
3
Vdc
Drain-Source On-Voltage
(VGS
= 5 Vdc, I
D
= 1.2 A)
RDS(on)
?
?
0.5
Ω
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 4.0 Adc)
VDS(on)
?
?
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Ciss
?
?
500
pF
Output Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Coss
?
?
250
pF
Reverse Transfer Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Crss
?
?
35
pF
RF Characteristics
(In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA) f = 175 MHz
Gps
?
14.5
?
dB
Drain Efficiency
(VDD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA) f = 175 MHz
η
?
55
?
%
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