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参数资料
| 型号： | MRF157 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 368-03, 2 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 190K |
| 代理商： | MRF157 |
The RF Power MOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 21 dB (Typ)
Efficiency = 45% (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
125
Vdc
Drain–Gate Voltage
VDGO
125
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
60
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1350
7.7
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.13
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF157
600 W, to 80 MHz
MOS LINEAR
RF POWER FET
CASE 368–03, STYLE 2
D
G
S
Order this document
by MRF157/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1570FNT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS TO272-6N FLAT RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1570FT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF1570N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS TO272-6N FORMED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1570NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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