参数资料
型号: MRF16030
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF POWER TRANSISTOR NPN SILICON
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: CASE 395C-01, 2 PIN
文件页数: 1/6页
文件大小: 108K
代理商: MRF16030
1
MRF16030
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VEBO
IC
PD
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector–Current
4.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
103
0.58
Watts
°
C/W
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2)
R
θ
JC
1.7
°
C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF16030/D
SEMICONDUCTOR TECHNICAL DATA
CASE 395C–01, STYLE 2
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
REV 3
相关PDF资料
PDF描述
MRF18060ASR3 RF POWER FIELD EFFECT TRANSISTORS
MRF18060A RF POWER FIELD EFFECT TRANSISTORS
MRF18060ALSR3 10 AMP SUBMINIATURE POWER RELAY
MRF18060AR3 RF POWER FIELD EFFECT TRANSISTORS
MRF21085R3 RF Power Field Effect Transistors
相关代理商/技术参数
参数描述
MRF161 制造商:ASI 制造商全称:ASI 功能描述:SILICON N-CHANNEL RF POWER MOSFET
MRF166 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MOSFET BROADBAND RF POWER FETs
MRF166C 功能描述:射频MOSFET电源晶体管 5-500MHz 20Watts 28Volt Gain 13.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF166W 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 8A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF171 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray