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| 型号： | MRF18030ALSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 671K |
| 描述： | IC MOSFET RF N-CHAN NI-400S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.81GHz |
| 增益： | 14dB |
| 电压 - 测试： | 26V |
| 额定电流： | 1µA |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400S |
| 供应商设备封装： | NI-400S |
| 包装： | 带卷 (TR) |
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MRF18030ALR3 MRF18030ALSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
amplifier applications. Specified for GSM 1805--1880 MHz.
?
Typical GSM Performance:
Power Gain -- 14 dB (Typ) @ 30 Watts
Efficiency -- 50% (Typ) @ 30 Watts
?
Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
?
in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.1
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18030A
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
MRF18030ALR3
MRF18030ALSR3
1800--1880 MHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF18030ALR3
CASE 465F--04, STYLE 1
NI--400S
MRF18030ALSR3
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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相关代理商/技术参数 |
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