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参数资料
| 型号： | MRF18030BSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-400S, CASE 465F-04, 2 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 342K |
| 代理商： | MRF18030BSR3 |
MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1930 - 1990 MHz.
Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.1
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18030B/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF18030BR3
MRF18030BLR3
MRF18030BSR3
MRF18030BLSR3
GSM/GSM EDGE 1.93 - 1.99 GHz,
30 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF18030BR3,
MRF18030BLR3
CASE 465F-04, STYLE 1
NI-400S
MRF18030BSR3,
MRF18030BLSR3
Motorola, Inc. 2004
REV 4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1803BR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF18060A | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18060ALR3 | 功能描述:射频MOSFET电源晶体管 60W GSM 1.8GHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF18060ALR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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