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参数资料
| 型号： | MRF18090A |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS场效应管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880, CASE 465B-03, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 155K |
| 代理商： | MRF18090A |
1
MRF18090A MRF18090AS
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications from frequencies up
to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 52% (Typ) @ 90 Watts (CW)
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15
,
–0.5
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +200
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18090A/D
SEMICONDUCTOR TECHNICAL DATA
90 W, 1.80 – 1.88 GHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
CASE 465B–02, STYLE 1
CASE 465C–01, STYLE 1
相关PDF资料 |
PDF描述 |
|---|---|
| MRF18090AS | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF18090BS | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF18090B | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF184 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF18090AR3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18090AS | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
| MRF18090B | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18090BS | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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