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参数资料
| 型号： | MRF18090AS |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880S, CASE 465C-02, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 404K |
| 代理商： | MRF18090AS |
1
MRF18090A MRF18090AS
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for GSM and GSM EDGE cellular radio
applications.
GSM and GSM EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
250
1.43
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18090A/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF18090A
MRF18090AS
1.80 – 1.88 GHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 465B–03, STYLE 1
NI–880
MRF18090A
CASE 465C–02, STYLE 1
NI–880S
MRF18090AS
Motorola, Inc. 2003
REV 4
相关PDF资料 |
PDF描述 |
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| MRF18090BR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18090BSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181ZR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181ZR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF18090B | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18090BS | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF181S | 制造商:MOTOROLA 功能描述:SHELF STOCK |
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