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参数资料
| 型号： | MRF18090BR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 404K |
| 代理商： | MRF18090BR3 |
MRF18090BR3 MRF18090BSR3
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL
1 W
Pin = 5 W
Figure 5. Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS)
10
Figure 6. Output Power versus Supply Voltage
0
VDD, SUPPLY VOLTAGE (VOLTS)
140
40
G
ps
,POWER
GAIN
(dB)
12
1
P
Figure 7. Output Power versus Frequency
120
f, FREQUENCY (GHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
Pin, INPUT POWER (WATTS)
20
1.91
0
15
1
120
20
2.01
60
1000
32
22
40
0
2
1.93
Figure 9. Wideband Gain and IRL
(at Small Signal)
16
f, FREQUENCY (GHz)
6
1.88
10
2.02
14
1.92
1.90
1.94
10
13
16
14
750 mA
500 mA
300 mA
IDQ = 1000 mA
26
1.95
34
5
6
60
50
40
10
0
h
VDD = 26 Vdc
f = 1990 MHz
11
12
28
20
24
80
,OUTPUT
POWER
(W
A
TTS)
out
2 W
Pin = 5 W
IDQ = 750 mA
f = 1990 MHz
P
,OUTPUT
POWER
(W
A
TTS)
out
1.97
1.99
60
80
100
VDD = 26 Vdc
IDQ = 750 mA
1 W
2 W
40
60
80
P
,OUTPUT
POWER
(W
A
TTS)
out
20
30
Pout
VDD = 26 Vdc
IDQ = 750 mA
f = 1990 MHz
12
G
ps
,POWER
GAIN
(dB)
0
15
25
20
5
10
VDD = 26 Vdc
IDQ = 750 mA
Gps
8
IRL,
INPUT
RETURN
LOSS
(dB)
0.1
100
30
18
16
14
100
120
100
1.98
1.96
2.00
2.04
,DRAIN
EFFICIENCY
(%)
η
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF18090BS | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF181S | 制造商:MOTOROLA 功能描述:SHELF STOCK |
| MRF182 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF182S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B 制造商:Njs 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
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