参数资料
型号: MRF181SR1
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 458B-02, 3 PIN
文件页数: 8/12页
文件大小: 143K
代理商: MRF181SR1
LIFETIME
BUY
LAST
ORDER
31JUN04
LAST
SHIP
31JAN05
5
MRF181SR1 MRF181ZR1
MOTOROLA RF DEVICE DATA
I D
,DRAIN
CURRENT
(mA)
G
ps
,POWER
GAIN
(dB)
1200
800
400
0
135
7
VGS, GATE VOLTAGE (VOLTS)
8
800
840
880
920
960
f, FREQUENCY (MHz)
P
out
,OUTPUT
POWER
(W
A
TTS)
TYPICAL CHARACTERISTICS
Figure 8. Output Power versus Frequency
Figure 9. Drain Current versus Gate Voltage
7
5
3
1
0
VDS = 28 Vdc
20
15
10
0
010
20
30
50
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
Figure 10. Capacitance versus Voltage
VGS = 0 Vdc
f = 1.0 MHz
2
1.2
0.4
0
102030
35
VDS, DRAIN VOLTAGE (Vdc)
,DRAIN
CURRENT
(AMPS)
Figure 11. DC Safe Operating Area
TJ = 150°C
TF = 70°C
2
010
20
35
VDS, DRAIN VOLTAGE (Vdc)
Figure 12. DC Safe Operating Area
1.4
0.8
0
18
880
900
920
980
f, FREQUENCY (MHz)
Figure 13. Performance in Broadband Circuit
17
16
14
15
940
960
TYPICAL DEVICE SHOWN
10 mW
50 mW
Pin = 100 mW
VDD = 28 Vdc
IDQ = 75 mA
SINGLE TONE
820
860
900
940
6
4
2
246
1000
600
200
5
515
25
40
45
35
Ciss
Coss
Crss
515
25
1.8
1
0.2
1.6
0.8
1.4
0.6
TJ = 175°C
TF = 70°C
515
25
30
1.6
1.0
0.4
1.8
1.2
0.6
0.2
VDD = 28 Vdc
IDQ = 75 mA
Pout = 4.0 W (CW)
VSWR
Gps
INPUT
VSWR
17.5
16.5
15.5
14.5
50
45
40
30
η
35
η
,EFFICIENCY
(%)
1.0
1.5
2.0
2.5
I D
,DRAIN
CURRENT
(AMPS)
I D
相关PDF资料
PDF描述
MRF183LSR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF183R1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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MRF183SR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF183SR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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