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参数资料
| 型号： | MRF182S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 360C-03, 2 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 133K |
| 代理商： | MRF182S |
MRF182
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
P
,
o
VDS, SUPPLY VOLTAGE (VOLTS)
0
60
Pout, OUTPUT POWER (WATTS)
η
d
30
12
40
20
0
5
10
15
20
30
40
14
18
22
26
28
25
20
15
10
5
0
50
10
30
16
20
24
Gp
Pout, OUTPUT POWER (WATTS)
0
40
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus
Input Power at 1 GHz
P
,
o
Figure 3. Power Gain versus
Output Power at 1 GHz
16
35
20
10
0
0.5
1
1.5
2
2.5
15
25
35
40
14
12
10
8
6
30
25
5
15
20
30
C
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
0
20
Pin, INPUT POWER (WATTS)
P
,
o
100
0
18
12
8
0
0.5
1
1.5
2
2.5
3
5
15
25
30
10
1
16
14
4
10
10
20
Figure 4. Drain Efficiency versus
Output Power at 1 GHz
Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Input Power
Figure 7. Capacitance versus Drain
Source Voltage
25
35
2
6
VDS = 28 Vdc
IDQ = 50 mA
f = 1 GHz
VDS = 28 Vdc
IDQ = 50 mA
f = 1 GHz
f = 1 GHz
IDQ = 50 mA
0
5
4
0
2
10
VDS = 28 Vdc
IDQ = 50 mA
f = 1 GHz
VDS = 13.5 Vdc
IDQ = 50 mA
f = 1 GHz
Pin = 1.23 W
0.75 W
0.35 W
Ciss
Coss
Crss
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF183 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183LSR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183R1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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