参数资料
型号: MRF183
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 360B-04, 3 PIN
文件页数: 4/10页
文件大小: 221K
代理商: MRF183
MRF183 MRF183S
4
MOTOROLA RF DEVICE DATA
P
Pout, OUTPUT POWER (WATTS)
I
Pout, OUTPUT POWER (WATTS PEP)
–20
– 30
– 45
– 50
0.1
1
10
100
– 20
0
20
30
40
50
Pout, OUTPUT POWER (WATTS PEP)
I
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion versus
Output Power
Figure 3. Intermodulation Distortion versus
Output Power
– 30
– 40
– 50
– 60
– 70
5th
7th
VDD = 28 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 75 mA
150 mA
450 mA
16
14.5
13
1
10
100
G
Figure 4. Power Gain versus Output Power
50
20
0
0
1.5
3
Pin, INPUT POWER (WATTS)
P
Figure 5. Output Power versus Input Power
VDD = 28 Vdc
IDQ = 75 mA
f = 945 MHz
80
15
19
23
35
VDS, DRAIN VOLTAGE (VOLTS)
P
Figure 6. Output Power versus Drain Bias
Supply Voltage
60
40
0
50
0
0.5
1
5
VGS, GATE BIAS (VOLTS)
Figure 7. Output Power versus Gate Bias
Supply Voltage
30
10
0
2
3.5
Gpe
Pout
TYPICAL DEVICE SHOWN
VGS(th) TYPICAL = 3.13 V
3rd ORDER
10
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
250 mA
– 25
– 40
– 35
285 mA
150 mA
VDD = 28 Vdc
f = 945 MHz
75 mA
15.5
G
40
10
30
60
0.5
2
3.5
16
12
15
10
14
1.0 W
2.0 W
Pin = 4.0 W
VDD = 28 Vdc
Pin = 1.5 W
f1 = 945 MHz
17
21
31
27
33
25
29
70
50
20
40
20
2.5
3
4
4.5
1.5
IDQ = 450 mA
– 35
– 45
– 55
– 65
– 25
15
25
35
5
45
14
13.5
15
11
13
30
10
45
25
5
35
15
1
2.5
4
90
VDD = 28 Vdc
IDQ = 75 mA
f1 = 945 MHz
– 55
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