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参数资料
| 型号： | MRF184SR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-360S, CASE 360C-05, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 1009K |
| 代理商： | MRF184SR1 |
Archived 2005
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MRF184R1 MRF184SR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
100% Tested for Load Mismatch Stress at all Phase
Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW
In Tape and Reel. 500 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
7
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70
°C
PD
118
0.9
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.1
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1 mAdc)
V(BR)DSS
65
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
–
1
Adc
Gate–Source Leakage Current
(VGS = 20 Vd, VDS = 0 Vdc)
IGSS
–
1
Adc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF184/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF184R1
MRF184SR1
1.0 GHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF184R1
CASE 360C–05, STYLE 1
NI–360S
MRF184SR1
Motorola, Inc. 2002
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REV
10
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
相关PDF资料 |
PDF描述 |
|---|---|
| MRF184R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF184SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF184 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19045R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19045SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF185 | 制造商:ASI 制造商全称:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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