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参数资料
| 型号： | MRF19045SR3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-400S, CASE 465F-04, 2 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 326K |
| 代理商： | MRF19045SR3 |
MRF19045R3 MRF19045SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 550 mAdc)
V
GS(Q)
3
3.8
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
4.2
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
1.8
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2–carrier N–CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2–Carrier N–CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
G
ps
13
14.5
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2–Carrier N–CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
η
21
23.5
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2–Carrier N–CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth
Centered at f1 –2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier
Channel Power)
IM3
—
–37
–35
dBc
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2–carrier N–CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith
Centered at f1 –885 kHz and f2 +885 kHz)
ACPR
—
–51
–45
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2–Carrier N–CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
IRL
—
–16
–9
dB
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 550 mA, f = 1990 MHz)
P1dB
—
45
—
W
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 45 W CW, I
DQ
= 550 mA,
f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相关代理商/技术参数 |
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|---|---|
| MRF19060 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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| MRF19060S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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