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参数资料
| 型号： | MRF19060 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF MOSFET(射频MOS场效应管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 200K |
| 代理商： | MRF19060 |
MRF19060 MRF19060S
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
,
η
Gp
A
Figure 2. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
5
0
1900
1940
15
Figure 3. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
12
Pout, OUTPUT POWER (WATTS (Avg. CDMA))
45
20
1920
2000
35
4
–40
Figure 4. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
–65
Figure 5. Intermodulation Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
0.1
0.1
12
14
VDD = 26 V
IDQ = 500 mA, Pout = 60 WATTS (PEP)
TWO–TONE MEASUREMENT, 100 kHz TONE SPACING
40
–55
–45
–35
1.0
–5
–15
–30
10
25
20
10
11
1960
1980
8
16
100
10
0.1
10
2020
1.0
100
30
35
–35
0
–10
–25
–20
η
IRL
IMD
10
30
40
3rd Order
5th Order
7th Order
–25
–60
–50
–40
–30
–80
–20
–50
–70
–60
–40
–30
13
I
I
,
η
Gp
Figure 7. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
32
24
12.5
13.5
I
28
22
12
11.5
13
15
25
–100
20
–30
–50
–80
–90
–20
–40
–70
–60
2.25 MHz
885 kHz
1.25 MHz
VDD = 26 V
IDQ = 700 mA, f = 1960 MHz, CHANNEL SPACING
(CHANNEL BANDWIDTH): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
CDMA 9 CHANNELS FORWARD
PILOT:0, PAGING:1, TRAFFIC:8–13, SYNC:32
I
10
900 mA
700 mA
500 mA
VDD = 26 V
f = 1960 MHz
TWO–TONE MEASUREMENT, 100 kHz TONE SPACING
I
VDD = 26 V
IDQ = 700 mA, f = 1960 MHz
TWO–TONE MEASUREMENT, 100 kHz TONE SPACING
Gp
900 mA
700 mA
500 mA
VDD = 26 V
f = 1960 MHz
TWO–TONE MEASUREMENT, 100 kHz TONE SPACING
Gp
–38
–24
–28
–34
–36
–22
–26
–32
–30
26
30
f = 1960 MHz
IDQ = 500 mA, Pout = 60 WATTS (PEP)
TWO–TONE MEASUREMENT, 100 kHz TONE SPACING
Gps
η
Gps
Gps
IMD
相关PDF资料 |
PDF描述 |
|---|---|
| MRF19060S | RF MOSFET(射频MOS场效应管) |
| MRF19085LSR3 | RF Power Field Effect Transistors |
| MRF19085 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085LR3 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085R3 | RF Power Field Effect Transistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF19060LR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF19060SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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