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| 型号： | MRF19085LR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 403K |
| 描述： | IC MOSFET RF N-CHAN NI-780 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 850mA |
| 功率 - 输出： | 18W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
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2
RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 200
μAdc)
VGS(th)
2
?
4
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 850 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2 Adc)
VDS(on)
?
0.18
0.210
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 2 Adc)
gfs
?
6
?
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Crss
?
3.6
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps
12
13
?
dB
Drain Efficiency
(VDD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
21
23
?
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 -2.5 MHz and f2 = +2.5 MHz)
IMD
?
-36.5
-35
dBc
Adjacent Channel Power Ratio
(VDD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 -885 MHz and f2 =+885 MHz)
ACPR
?
-51
-48
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL
?
-12
-9
dB
1. Part is internally matched both on input and output.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF19085LSR3 | 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19085SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090 | 制造商:Motorola Inc 功能描述: |
| MRF19090R3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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