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参数资料
| 型号： | MRF19085S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 465A-06, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MRF19085S |
5.2–255
MRF19085 MRF19085R3 MRF19085S MRF19085SR3 MRF19085LS MRF19085LSR3
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz . Suitable for TDMA, CDMA and multic arrier amplifier
applications.
Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts,
IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — –51 dB
IM3 — –36.5 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
273
1.56
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.64
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF19085
MRF19085R3
MRF19085S
MRF19085SR3
MRF19085LS
MRF19085LSR3
1990 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF19085)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF19085S, MRF19085LS)
REV 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF19085SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090 | 制造商:Motorola Inc 功能描述: |
| MRF19090R3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19090SR3 | 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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