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| 型号： | MRF21010LSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 406K |
| 描述： | IC MOSFET RF N-CHAN NI-360S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 11W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-360S |
| 供应商设备封装： | NI-360 短引线 |
| 包装： | 带卷 (TR) |
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MRF21010LR1 MRF21010LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
?
Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
?
Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,
10 Watts CW Output Power
Features
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″
Nominal.
?
RoHS Compliant.
?
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
-- 0.5, +15
Vdc
Total Device Dissipation @ TC
= 25°C
Derate above 25°C
PD
43.75
0.25
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
5.5
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Document Number: MRF21010
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
2110--2170 MHz, 10 W, 28 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B--05, STYLE 1
NI--360
MRF21010LR1
MRF21010LR1
MRF21010LSR1
CASE 360C--05, STYLE 1
NI--360S
MRF21010LSR1
?
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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| MRF21030D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
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| MRF21030LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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| MRF21030R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
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