参数资料
型号: MRF21060SR3
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF Power Field Effect Transistors
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-780S, CASE 465A-06, 2 PIN
文件页数: 7/8页
文件大小: 550K
代理商: MRF21060SR3
7
MRF21060R3 MRF21060SR3
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 465-06
ISSUE F
NI-780
MRF21060R3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
A
B
C
D
E
F
G
H
K
M
MIN
1.335
0.380
0.125
0.495
0.035
0.003
1.100 BSC
0.057
0.170
0.774
MAX
1.345
0.390
0.170
0.505
0.045
0.006
MIN
33.91
9.65
3.18
12.57
0.89
0.08
27.94 BSC
1.45
4.32
19.66
MAX
34.16
9.91
4.32
12.83
1.14
0.15
MILLIMETERS
INCHES
0.067
0.210
0.786
1.70
5.33
19.96
N
Q
R
S
0.772
.118
0.365
0.365
0.005 REF
0.010 REF
0.015 REF
0.788
.138
0.375
0.375
19.60
3.00
9.27
9.27
0.127 REF
0.254 REF
0.381 REF
20.00
3.51
9.53
9.52
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
aaa
bbb
ccc
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A-06
ISSUE F
NI-780S
MRF21060SR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
A
B
C
D
E
F
H
K
M
N
MIN
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
MAX
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
MILLIMETERS
INCHES
R
S
U
Z
0.365
0.365
0.375
0.375
0.040
0.030
9.27
9.27
9.53
9.52
1.02
0.76
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
ccc
0.010 REF
0.015 REF
0.254 REF
0.381 REF
aaa
0.005 REF
0.127 REF
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相关PDF资料
PDF描述
MRF316 BROADBAND RF POWER TRANSISTOR NPN SILICON
MRF317 BROADBAND RF POWER TRANSISTOR NPN SILICON
MRF321 RF POWER TRANSISTOR NPN SILICON
MRF323 RF POWER TRANSISTOR NPN SILICON
MRF325 BROADBAND RF POWER TRANSISTOR NPN SILICON
相关代理商/技术参数
参数描述
MRF21085 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF21085LR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF21085LS 制造商:Motorola Inc 功能描述:
MRF21085LSR3 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF21085LSR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET