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参数资料
| 型号： | MRF255 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER FET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 95K |
| 代理商： | MRF255 |
1
MRF255 PHOTOMASTER
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1996
The RF MOSFET Line
N–Channel Enhancement–Mode
Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic
C1 — 470 pF, Chip Capacitor
C2, C3, C11, C12 — 20–200 pF, Trimmer, ARCO #464
C4 — 100 pF, Chip Capacitor
C5, C17 — 100
μ
F, 15 V, Electrolytic
C6 — 0.001
μ
F, Disc Ceramic
C7, C8, C9, C10 — 330 pF, Chip Capacitor
C14 — 1200 pF, ATC Chip Capacitor
C15 — 910 pF, 500 V, Dipped Mica
C16 — 47
μ
F, 16 V, Electrolytic
L1 — 8 Turns, #20 AWG, 0.126
″
ID
L2 — 5 Turns, #18 AWG, 0.142
″
ID
L3 — 3 Turns, #20 AWG, 0.102
″
ID
L4 — 7 Turns, #24 AWG, 0.070
″
ID
L5 — 6.5 Turns, #18 AWG, 0.230
″
ID, 0.5
″
Long
N1, N2 — Type N Flange Mount
RFC1 — Ferroxcube VK–200–19/4B
R1 — 39 k
, 1/4 W Carbon
R2 — 150
, 1/4 W Carbon
Board — G–10 .060
″
VGG
VDD
RF
OUTPUT
RF
INPUT
RFC1
+
+
+
C5
C6
C15
C16
C17
C4
C7
C8
L5
L1
L2
R2
R1
C2
C3
C1
N1
N2
C14
C9
C10
C11
C12
L3
L4
DUT
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.
Order this document
by MRF255PHT/D
SEMICONDUCTOR TECHNICAL DATA
CASE 211–11, STYLE 2
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF255PHT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field-Effect Transistor |
| MRF260 | 制造商:ASI 制造商全称:ASI 功能描述:SILICON NPN RF POWER TRANSISTOR |
| MRF2628 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF264 | 制造商:ASI 制造商全称:ASI 功能描述:SILICON NPN RF POWER TRANSISTOR |
| MRF275 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FET |
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