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参数资料
| 型号： | MRF284LSR1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-360S, CASE 360C-05, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 395K |
| 代理商： | MRF284LSR1 |
MRF284LR1 MRF284LSR1
MOTOROLA RF DEVICE DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN-PCS/cellular radio
and wireless local loop.
Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = -29 dBc
Typical Single-Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
87.5
0.5
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.0
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, ID = 10 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
IDSS
—
1.0
Adc
Gate-Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
10
Adc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF284/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF284LR1
MRF284LSR1
2000 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF284LR1
CASE 360C-05, STYLE 1
NI-360S
MRF284LSR1
Motorola, Inc. 2003
REV 14
相关PDF资料 |
PDF描述 |
|---|---|
| MRF284LR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF284LSR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF284R1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF372R3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF372 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF284R5 | 制造商:Motorola Inc 功能描述:284R5 |
| MRF284S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field-Effect Transistors |
| MRF286 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors |
| MRF286S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors |
| MRF2947 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
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