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参数资料
| 型号： | MRF316 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 133K |
| 代理商： | MRF316 |
MRF316
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
NARROW BAND FUNCTIONAL TESTS
(Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 80 W, f = 150 MHz)
GPE
10
13
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 80 W, f = 150 MHz)
η
55
—
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz,
VSWR = 30:1 all phase angles)
ψ
No Degradation in Output Power
Figure 1. 150 MHz Test Amplifier
R2
R3
RFC6
L2
C13
C12
C4
RFC2
RFC1
C5
C7
C10
C1
+ 28 Vdc
C8
DUT
C11
L1
RFC3
C6
RFC5
C9
RFC4
R1
C3
C2
C1 — 22 pF 100 mil ATC
C2, C3 — 24 pF 100 mil ATC
C4, C11 — 0.8–20 pF JMC #5501 Johanson
C5 — 200 pF 100 mil ATC
C6 — 240 pF 100 mil ATC
C7 — Dipped Mica 1000 pF
C8 — 0.1
μ
F Erie Red Cap
C9, C10, C12 — 30 pF 100 mil ATC
C13 — 1.0
μ
F Tantalum
L1 — 0.8
″
, #20 Wire
L2 — 1.0
″
, #20 Wire
RFC1, RFC4 — 0.15
μ
H Molded Coil
RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B
RFC5 — 2.5
″
, #20 Wire, 1.5 Turns
RFC6 — Ferroxcube VK200–19/4B
R1 — 10
, 1/2 W
R2, R3 — 10
, 1.0 W
RF
INPUT
RF
OUTPUT
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| MRF317 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 12A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:M/A-COM Technology Solutions 功能描述:Trans GP BJT NPN 35V 12A 4-Pin Case 316-01 |
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| MRF323 | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF325 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF326 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
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