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参数资料
| 型号： | MRF327 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 166K |
| 代理商： | MRF327 |
1
MRF327
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to
400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
Built–In Matching Network for Broadband Operation Using Double Match
Technique
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
Characterized for 100
to
500 MHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
33
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
Collector Current
— Peak
9.0
12
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
PD
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
33
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
V(BR)CBO
60
—
—
Vdc
ICBO
—
—
5.0
mAdc
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
20
—
80
—
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Cob
—
95
125
pF
(continued)
Order this document
by MRF327/D
SEMICONDUCTOR TECHNICAL DATA
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MRF329 | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF338 | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF5007R1 | Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:SM3102; No. of Contacts:19; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| MRF8372R1 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF8372R2 | Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF329 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF331 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF Line |
| MRF338 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF340 | 制造商:Motorola Inc 功能描述: |
| MRF340_07 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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