参数资料
型号: MRF329
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.425 INCH, FM
文件页数: 1/1页
文件大小: 10K
代理商: MRF329
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 80 mA
60
V
BVCES
IC = 80 mA
60
V
BVCEO
IC = 80 mA
30
V
BVEBO
IE = 8.0 mA
4.0
V
ICBO
VCB = 30 V
5.0
mA
hFE
VCE = 5.0 V
IC = 4.0 A
20
80
---
Cob
VCB = 28 V
f = 1.0 MHz
95
125
pF
GPE
ηηηη
VCC = 28 V
Pout = 100 W
f = 400 MHz
7.0
50
9.7
60
dB
%
ψ
VCC = 28 V
Pout = 100 W
f = 400 MHz
VSWR = 3:1
ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
NPN SILICON RF POWER TRANSISTOR
MRF329
DESCRIPTION:
The
ASI MRF329 is Designed for
Wide Band Large-Signal Output and
Driver Amplifier Stages in the
100-500 MHz Frequency Range.
FEATURES INCLUDE:
Gold Metalization
3:1 VSWR
I/O Network Matching
MAXIMUM RATINGS
IC
9.0 A (CONT)
12.0 A (PEAK)
VCB
60 V
PDISS
270 W @ TC = 25
OC
TJ
-65
OC to +150 OC
TSTG
-65
OC to +150 OC
θθθθ
JC
0.65
OC/W
PACKAGE STYLE .400X.425" 6L FLG.
1 & 3 = EMITTER
2 = COLLECTOR
4 = BASE
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