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参数资料
| 型号： | MRF372 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 541K |
| 代理商： | MRF372 |
1
MRF372
Motorola, Inc. 2002
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
32 volt transmitter equipment.
Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — –35 dBc
Typical Broadband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — –31 dBc
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
100% Tested for Load Mismatch Stress at All Phase Angles
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
(1)
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
68
Vdc
Gate–Source Voltage
V
GS
– 0.5, +15
Vdc
Drain Current – Continuous
I
D
17
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
350
2.0
W
W/
°
C
Storage Temperature Range
T
stg
– 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.5
°
C/W
(1) Each side of device measured separately.
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF372/D
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 180 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375G–04, STYLE 1
NI–860C3
REV 5
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| MRF373A | RF Power Field Effect Transistors |
| MRF373ALR1 | RF Power Field Effect Transistors |
| MRF373ALSR1 | RF Power Field Effect Transistors |
| MRF373R1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF373SR1 | RF POWER FIELD EFFECT TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF372D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF372R3 | 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF372R5 | 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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