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参数资料
| 型号： | MRF372R5 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 510K |
| 代理商： | MRF372R5 |
MRF372 MRF372R5
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power FieldEffect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in
32 volt transmitter equipment.
Typical Narrowband Two-Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — -35 dBc
Typical Broadband Two-Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — -31 dBc
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
100% Tested for Load Mismatch Stress at All Phase Angles
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available in Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS (1)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
68
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.5
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Each side of device measured separately.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF372/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 - 860 MHz, 180 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
MRF372
MRF372R5
Motorola, Inc. 2004
REV 7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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