参数资料
型号: MRF373AS
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 360C-05, 3 PIN
文件页数: 1/5页
文件大小: 139K
代理商: MRF373AS
MRF373A MRF373AS
5.2–36
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts (CW)
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
70
Vdc
Gate–Source Voltage
VGS
+15, – 0.5
Vdc
Total Device Dissipation @ TC = 25°C
MRF373A
Derate above 25
°C
MRF373AS
PD
197
1.12
278
1.59
Watts
W/
°C
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373A
MRF373AS
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373A
MRF373AS
RθJC
0.89
0.63
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
(NI–360)
(MRF373A)
CASE 360C–05, STYLE 1
(NI–360S)
(MRF373AS)
MRF373A
MRF373AS
G
D
S
REV 1
相关PDF资料
PDF描述
MRF373A UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF3866R1 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF3866R2G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF3866G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MRF373ASR1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373R1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373S 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF373SR1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF374 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR