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参数资料
| 型号： | MRF373SR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-360S, CASE 360C-05, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 1482K |
| 代理商： | MRF373SR1 |
1
MRF373R1 MRF373SR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28 volt transmitter equipment.
Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
In Tape and Reel. R1 = 500 units per 32 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current – Continuous
ID
7
Adc
Total Device Dissipation @ TC = 25°C
MRF373SR1
Derate above 25
°C
PD
173
1.33
W
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373SR1
RθJC
0.75
°C/W
Thermal Resistance, Junction to Case
MRF373R1
RθJC
1
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF373/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
CASE 360B–05, STYLE 1
NI–360
MRF373R1
CASE 360C–05, STYLE 1
NI–360S
MRF373SR1
MRF373R1
MRF373SR1
Motorola, Inc. 2002
G
D
S
REV 6
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
A
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C
H
IV
E
D
2
0
5
相关PDF资料 |
PDF描述 |
|---|---|
| MRF373 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373S | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF374A | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF374 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF374 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF374A | 功能描述:射频MOSFET电源晶体管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF374A_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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