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参数资料
| 型号： | MRF374 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS场效应管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-650, CASE 375F-03, 5 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 250K |
| 代理商： | MRF374 |
Product Is Not Recommended for New Design.
The next generation of higher performance products are in development. Visit our online
Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
1
MRF374
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies
from 470 – 860 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 28 volt
transmitter equipment.
Typical Two–Tone Performance @ 860 MHz, 28 Volts, Narrow-
band Fixture
Output Power – 100 Watts PEP
Power Gain – 13.5 dB
Efficiency – 36%
IMD – –31 dBc
Typical Performance at 860 MHz, 28 Volts, Broadband Fixture
Output Power – 100 Watts PEP
Power Gain – 12 dB
Efficiency – 36%
IMD – –34 dBc
100% Tested for Load Mismatch Stress at All Phase Angles
with
5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW
Excellent Thermal Stability
Characterized with Differential Large–Signal Impedance Pa-
rameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current – Continuous (per Side)
7
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
350
1.25
W
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF374/D
SEMICONDUCTOR TECHNICAL DATA
100 W, 470 – 860 MHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F–02, STYLE 1
Motorola, Inc. 2000
REV 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF374A | 功能描述:射频MOSFET电源晶体管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF374A_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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