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参数资料
| 型号： | MRF3866 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, M240, SO-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 59K |
| 代理商： | MRF3866 |
MRF3866R2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
5.0
10
—
200
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
VCE(sat)
—
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
fT
500
—
MHz
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
3.0
pF
FUNCTIONAL TEST
Amplifier Power Gain
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
Gpe
10
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
NOTE:
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
η
45
—
%
VCE
(Volts)
IC
f
S11
S21
S12
S22
(mA)
(MHz)
S11
0.67
0.69
0.70
0.71
0.72
0.72
0.72
0.72
0.71
0.70
∠
φ
S21
13.75
6.93
4.57
3.38
2.66
2.17
1.85
1.61
1.40
1.25
∠
φ
S12
0.016
0.024
0.032
0.042
0.049
0.056
0.061
0.068
0.075
0.084
∠
φ
S22
0.32
0.30
0.32
0.34
0.37
0.40
0.43
0.47
0.50
0.53
∠
φ
15
50
100
200
300
400
500
600
700
800
900
1000
–166
–176
177
172
168
164
160
155
151
146
92
81
73
67
61
54
49
44
39
34
44
53
57
59
59
61
63
65
64
68
–27
–24
–31
–37
–45
–53
–60
–66
–73
–79
Table 1. MRF3866R2 Common Emitter S–Parameters
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF3866G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF390 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF392 | 功能描述:射频双极电源晶体管 100-400MHz 125Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
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