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参数资料
| 型号： | MRF4427R1 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | Inductor; Inductor Type:Power; Inductance:10uH; Inductance Tolerance:+/- 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:2.89A; Current, lt rms Series:1.45A RoHS Compliant: Yes |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 5/6页 |
| 文件大小： | 85K |
| 代理商： | MRF4427R1 |
5
MRF4427R2
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 751–05
ISSUE S
SEATING
1
4
5
8
A
0.25
M
C B
S
S
0.25
M
B
M
h
C
X 45
L
DIM
A
A1
B
C
D
E
e
H
h
L
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
MILLIMETERS
1.27 BSC
5.80
0.25
6.20
0.50
0
7
0.40
1.25
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D
E
H
A
B
e
B
A1
C
A
0.10
STYLE 1:
PIN 1.
EMITTER
COLLECTOR
COLLECTOR
EMITTER
EMITTER
BASE
BASE
EMITTER
2.
3.
4.
5.
6.
7.
8.
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| MRF4427 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF448 | RF POWER TRANSISTOR NPN SILICON |
| MRF453 | RF POWER TRANSISTORS |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF4427R2 | 制造商:Microsemi Corporation 功能描述:MRF4427R2 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF448 | 功能描述:射频双极电源晶体管 2-30MHz 250Watts 50Volt Gain 12dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF448MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF449 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTORS |
| MRF449A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTORS |
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