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参数资料
| 型号： | MRF454 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 20 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 57K |
| 代理商： | MRF454 |
1
MRF454
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 80 Watts
Minimum Gain = 12 dB
Efficiency = 50%
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
25
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
20
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)EBO
18
—
—
Vdc
36
—
—
Vdc
4.0
—
—
Vdc
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
40
—
150
—
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
(Figure 1)
Cob
—
—
250
pF
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
Gpe
12
—
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
η
50
—
—
%
Series Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
Zin
—
.938–j.341
—
Ohms
Series Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
Zout
—
1.16–j.201
—
Ohms
Parallel Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
—
—
1.06
1817 pF
—
—
Parallel Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
—
—
1.19
777 pF
—
—
Order this document
by MRF454/D
SEMICONDUCTOR TECHNICAL DATA
80 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF454MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF455 | 功能描述:射频双极电源晶体管 2-30MHz 60Watts 12.5Volt Gain 13dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF455MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF460 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF464 | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
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