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参数资料
| 型号： | MRF455 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 15 A, 18 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 75K |
| 代理商： | MRF455 |
MRF455
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
FUNCTIONAL TESTS
(Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Gpe
13
—
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
η
55
—
—
%
Series Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zin
—
1.66–j.844
—
Ohms
Series Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zout
—
1.73–j.188
—
Ohms
Parallel Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zin
—
2.09/1030
—
/pF
Parallel Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz)
Zout
—
1.75/330
—
/pF
Figure 1. 30 MHz Test Circuit Schematic
f = 30 MHz
o
80
Pin, INPUT POWER (WATTS)
0
70
60
50
40
0
1
2
3
4
5
30
20
10
o
VCC, SUPPLY VOLTAGE (VOLTS)
0.5
1.5
2.5
3.5
4.5
VCC = 13.6 V
80
70
60
50
40
30
20
10
f = 30 MHz
12.5 V
Pin = 3.5 V
1 W
1.75 W
8
10
12
14
16
18
9
11
13
15
17
L3
R1
C5
C6
C7
C8
RF OUTPUT
L4
C4
C1
C2
L2
DUT
C3
L1
–
+
12.5 Vdc
L5
RF INPUT
C1, C2, C4 — ARCO 469
C3 — ARCO 466
C5 — 1000 pF, UNELCO
C6, C7 — 0.1
μ
F Disc Ceramic
C8 — 1000
μ
F/15 V Electrolytic
R1 — 10 Ohm/1.0 Watt, Carbon
L1 — 3 Turns, #18 AWG, 5/16
″
I.D., 5/16
″
Long
L2 — VK200–20/4B, FERROXCUBE
L3 — 12 Turns, #18 AWG Enameled Wire, 1/4
″
I.D., Close Wound
L4 — 3 Turns 1/8
″
O.D. Copper Tubing, 3/8
″
I.D., 3/4
″
Long
L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B
90
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
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相关代理商/技术参数 |
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|---|---|
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