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参数资料
| 型号： | MRF460 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.500 INCH, FM-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 19K |
| 代理商： | MRF460 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 100 mA
BV
CEO
I
C
= 100 mA
BV
EBO
I
E
= 5.0 mA
I
CES
V
CE
= 12.5 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
C
OB
V
CB
= 12.5 V f = 1.0 MHz
G
PE
IMD
η
C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
UNITS
V
V
V
mA
---
pF
dB
dB
%
20
4.0
10
20
300
350
V
CC
= 12.5 V I
C
= 4.7 A P
OUT
= 40 W
(
PEP
)
f = 30 MHz
12
40
15
-35
45
-30
NPN SILICON RF POWER TRANSISTOR
MRF460
DESCRIPTION:
The
ASI MRF460
is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
Omnigold
Metalization System
P
G
= 12 dB Min. @ 30 MHz & 40 W
Efficiency 40%
MAXIMUM RATINGS
I
C
215 A
V
CBO
40 V
V
CEO
20 V
V
EBO
4.0 V
P
DISS
175 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.0 °C/W
PACKAGE STYLE .500" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
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