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参数资料
| 型号： | MRF5711LT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, CASE 318A-05, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 194K |
| 代理商： | MRF5711LT1 |
1
MMBR571LT1 MRF5711LT1
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistors
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
10
Vdc
Collector–Base Voltage
VCBO
20
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
80
mA
Total Device Dissipation @ Tcase = 75°C
Derate linearly above Tcase = 75°C @
PD(max)
0.33
4.44
W
mW/
°C
Operating and Storage Temperature
Tstg
– 55 to
+150
°C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
R
θJC
225
°C/W
Maximum Junction Temperature
TJmax
150
°C
DEVICE MARKING
MMBR571LT1 = 7X
MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR571LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBR571LT1
MRF5711LT1
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
Motorola, Inc. 1998
REV 9
ARCHIVE
INFORMA
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5711MLT1 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 10V 0.08A 4-Pin(3+Tab) SOT-143 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:Trans GP BJT NPN 10V 0.08A 4-Pin(3+Tab) SOT-143 |
| MRF572 | 制造商:ASI 制造商全称:ASI 功能描述:SILICON NPN RF TRANSISTOR |
| MRF577T1 | 制造商:Motorola 功能描述:MOTOROLA S7D9B |
| MRF581 | 功能描述:射频放大器 RF Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF581_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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