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参数资料
| 型号： | MRF587 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 0K |
| 代理商： | MRF587 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
34
V
BVCEO
IC = 5.0 mA
17
V
BVEBO
IE = 100 A
2.5
V
ICBO
VCB = 10 V
50
A
hFE
VCE = 5.0 V
IC = 50 mA
50
200
---
Ccb
VCB = 10 V
f = 1.0 MHz
1.7
2.2
pF
GP
ηηηη
C
VCC = 15 V
IC = 90 mA
f = 0.3 GHz
11
65
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF587
DESCRIPTION:
The
ASI MRF587 is Designed for
High Linearity Power Amplifier
Applications up to 500 MHz.
FEATURES:
P
G = 16 dB Typical at 220 W/500 MHz
Low Noise Figure
Diffused Ballast Resistors
Omnigold Metalization System
MAXIMUM RATINGS
IC
200 mA
VCBO
34 V
VCEO
17 V
VEBO
2.5 V
PDISS
5.0 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
PACKAGE STYLE .280 4L STUD
Lead 1 = Collector
2 & 3 = Emitter
4 = Base
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
1
2
3
4
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参数描述 |
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