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参数资料
| 型号： | MRF5943G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, M240, SO-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 124K |
| 代理商： | MRF5943G |
MRF5943, R1, R2
MRF5943G, R1, R2
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
* G Denotes RoHS Compliant, Pb Free Terminal Finish
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and
oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
30
Vdc
VCBO
Collector-Base Voltage
40
Vdc
VEBO
Emitter-Base Voltage
3.5
Vdc
IC
Collector Current
400
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 25C
Derate above 25C
1.0
8
Watts
mW/ C
T
stg
Storage Temperature
150
C
RθJA
Thermal Resistance, Junction to Ambient
125
C/W
SO-8
Features
Low Cost SO-8 Plastic Surface Mount Package.
S-Parameter Characterization
Tape and Reel Packaging Options Available
Maximum Available Gain = 17dB @ 300MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5943R1G | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5943 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5943R2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5P20180R6 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5P21180HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5943R1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF5943R2 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SO |
| MRF5P20180 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P20180HR5 | 功能描述:MOSFET RF N-CHAN 28V 38W NI-1230 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5P20180HR6 | 功能描述:MOSFET RF N-CHAN 28V 38W NI-1230 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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