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参数资料
| 型号： | MRF5S19100HD |
| 厂商： | Motorola, Inc. |
| 英文描述： | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射频MOSFET线的射频功率场效应晶体管N沟道增强型MOSFET的外侧 |
| 文件页数： | 2/12页 |
| 文件大小： | 726K |
| 代理商： | MRF5S19100HD |
MRF5S19100HR3 MRF5S19100HSR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 240
μ
Adc)
V
GS(th)
—
2.7
—
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
V
GS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
V
DS(on)
—
0.26
—
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.4 Adc)
g
fs
—
6.3
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
2.2
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Bandwidth @
±
885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±
2.5 MHz Offset. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
12.5
13.9
—
dB
Drain Efficiency
η
D
24
25.5
—
%
Intermodulation Distortion
IM3
—
-36.5
-35
dBc
Adjacent Channel Power Ratio
ACPR
—
-50.7
-48
dBc
Input Return Loss
IRL
—
-13
-9
dB
(1) Part is internally matched both on input and output.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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| MRF5S19100HR3 | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF5S19100HR3 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HR5 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19100HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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