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| 型号： | MRF5S19100HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 599K |
| 描述： | MOSFET RF N-CHAN 28V 22W NI-780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
MRF5S19100HR3 MRF5S19100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
?
Typical 2-Carrier N-CDMA Performance: VDD
= 28 Volts,
IDQ
= 1000 mA, P
out
= 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 13.9 dB
Drain Efficiency ? 25.5%
IM3 @ 2.5 MHz Offset ? -36.5 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset ? -50.7 dBc in 30 kHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Lower Thermal Resistance Package
?
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
269
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
RθJC
0.64
0.65
°C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S19100H
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
MRF5S19100HR3
MRF5S19100HSR3
1930-1990 MHz, 22 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF5S19100HR3
CASE 465A-06, STYLE 1
NI-780S
MRF5S19100HSR3
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19100HR5 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19100HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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