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参数资料
| 型号： | MRF5S19130HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 412K |
| 描述： | MOSFET RF N-CHAN 28V 26W NI-880S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 26W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
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MRF5S19130HR3 MRF5S19130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
12 25ηD
1910
1920
1930
1940
1950
1960
1970
1980
1990
2000
5
15
1900
?60
40
10 ?10IRL
13 30Gps
6 ?50ACPR
8 ?30IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
@ Pout
= 26 Watts Avg.
G
ps
, POWER GAIN (dB)
11 20VDD
= 28 Vdc, P
out
= 26 W (Avg.), I
DQ
= 1200 mA
2?Carrier N?CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
9 ?20PAR = 9.8 dB @ 0.01% Probability (CCDF)
?30
?5
?10
?15
?20
INPUT RETURN LOSS (dB)
IRL,
IM3 (dBc), ACPR (dBc)
?25
14 35
7 ?40
200
10
16
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
IDQ
= 1800 mA
VDD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two?Tone Measurement, 2.5 MHz Tone Spacing
1500 mA
1200 mA
600 mA
900 mA
15
14
13
12
11
10 100
200
?60
?25
1
IDQ
= 1800 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
VDD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two?Tone Measurement, 2.5 MHz Tone Spacing
10 100
?30
?40
?45
?50
?55
?35
1500 mA
1200 mA
600 mA
900 mA
10
?60
?20
0.1
3rd Order
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)
IMD,
1
?25
?30
?35
?40
?45
?50
?55
5th Order
7th Order
45
48
60
35
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
36 37 38 39 40 41 42 43 44
59
58
57
56
55
54
53
52
51
50
49
P3dB = 53.11 dBm (205.57 W)
VDD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 1960 MHz
P1dB = 52.54 dBm (179.61 W)
Actual
Ideal
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
η
D
, DRAIN
EFFICIENCY (%)
VDD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19130R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19130SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19150 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19150H | 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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