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参数资料
| 型号： | MRF5S21045NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/16页 |
| 文件大小： | 945K |
| 描述： | MOSFET RF N-CH 28V 10W TO272-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 带卷 (TR) |
MRF5S21045NR1 MRF5S21045NBR1
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Oct. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
?
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
?
Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and
Pin 2 designations.
?
Added Product Documentation and Revision History, p. 15
4.1
Dec. 2009
?
Corrected data sheet to reflect RF Test Reduction
frequency described in Product and Process Change
Notification number, PCN12779, p. 2
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21045NR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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