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参数资料
| 型号： | MRF5S21090HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 439K |
| 代理商： | MRF5S21090HR3 |
MRF5S21090HR3 MRF5S21090HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
269
1.5
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°
C
Case Operating Temperature
TC
150
°
C
Operating Junction Temperature
TJ
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW
RθJC
0.65
0.69
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF5S21090H
Rev. 3, 10/2008
Freescale Semiconductor
Technical Data
MRF5S21090HR3
MRF5S21090HSR3
2110--2170 MHz, 19 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF5S21090HR3
CASE 465A--06, STYLE 1
NI--780S
MRF5S21090HSR3
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Freescale Semiconductor, Inc., 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF5S21090HR5 | 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21090HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 RF LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21090HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 RF LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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