- 您现在的位置：买卖IC网 > PDF目录98038 > MRF5S9080NBR1 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 PDF资料下载
参数资料
| 型号： | MRF5S9080NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件页数： | 1/20页 |
| 文件大小： | 755K |
| 代理商： | MRF5S9080NBR1 |
MRF5S9080NR1 MRF5S9080NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts
CW, Full Frequency Band (869-894 MHz or 921-960 MHz).
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA,
Pout = 36 Watts Avg., Full Frequency Band (869-894 MHz or
921-960 MHz).
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.5% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200_C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.50
0.54
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S9080N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5S9080NR1
MRF5S9080NBR1
869-960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9080NBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9080NR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S9100MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9100NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9100NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF5S9100NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9100MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9080NR1 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9100MBR1 | 功能描述:MOSFET RF N-CH 26V 20W TO-272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9100MR1 | 功能描述:MOSFET RF N-CH 26V 20W TO-270-4 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9100N | 制造商:FREESCALE-SEMI 功能描述: |
| MRF5S9100NBR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。