- 您现在的位置：买卖IC网 > PDF目录371145 > MRF650 (MOTOROLA INC) RF POWER TRANSISTOR NPN SILICON PDF资料下载
参数资料
| 型号： | MRF650 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 316-01, 4 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 154K |
| 代理商： | MRF650 |
1
MRF650
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 520 MHz.
Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz
Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB
Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
Built–In Matching Network for Broadband Operation
Triple Ion Implanted for More Consistent Characteristics
Implanted Emitter Ballast Resistors
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with 20:1
VSWR @ 15.5 Vdc, 2.0 dB Overdrive
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
16.5
Vdc
Collector–Emitter Voltage
38
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
12
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
135
0.77
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25
°
C)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16.5
—
—
Vdc
38
—
—
Vdc
4.0
—
—
Vdc
—
—
5.0
mAdc
hFE
20
70
120
—
Cob
—
135
170
pF
(continued)
Order this document
by MRF650/D
SEMICONDUCTOR TECHNICAL DATA
50 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 8
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6522-70R3 | RF MOSFETS(RF MOS场效应管) |
| MRF652 | RF POWER TRANSISTORS NPN SILICON |
| MRF652S | RF POWER TRANSISTORS NPN SILICON |
| MRF653 | RF POWER TRANSISTOR NPN SILICON |
| MRF654 | RF POWER TRANSISTOR NPN SILICON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF652 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF6522-70 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522--70R3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522-70R3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
发布紧急采购，3分钟左右您将得到回复。