参数资料
型号: MRF6P21190HR5
厂商: Freescale Semiconductor
文件页数: 6/11页
文件大小: 707K
描述: MOSFET RF N-CHAN 28V 44W NI-1230
标准包装: 50
晶体管类型: LDMOS
频率: 2.11GHz
增益: 15.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.9A
功率 - 输出: 44W
电压 - 额定: 68V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 带卷 (TR)
4
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
--
+
C12
--
--
+
+
C18
--
C6
+
R1 C5
C4
C3
C2
R2 B1 B2
C1
C7
R4
B3 B4
C8
C11
C10
C9
R3
C15
C14
C16
C17
C21
C19
C20
C13
C22
C28 C29
C23
C24
C25
C26
C27
C30
CUT OUT AREA
MRF6P21190
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数
参数描述
MRF6P21190HR6 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P21190HR6_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray