- 您现在的位置：买卖IC网 > PDF目录21719 > MRF6P24190HR6 (Freescale Semiconductor)MOSFET RF N-CH 28V 190W NI-1230 PDF资料下载
参数资料
| 型号： | MRF6P24190HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 365K |
| 描述： | MOSFET RF N-CH 28V 190W NI-1230 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 2.39GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.9A |
| 功率 - 输出： | 40W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6P24190HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed primarily for large-signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
?
Typical CW Performance at 2450 MHz, VDD
= 28 Volts, I
DQ
= 1900 mA,
Pout
= 190 Watts
Power Gain ? 13.2 dB
Drain Efficiency ? 46.2%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
250
1.3
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
0.22
0.24
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P24190H
Rev. 3, 2/2009
Freescale Semiconductor
Technical Data
MRF6P24190HR6
2450 MHz, 190 W, 28 V
CW
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
?
Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRFE6P3300HR3 | MOSFET RF N-CH 300W 32V NI-860C3 |
| CE3292-49.152 | OSC 49.152 MHZ 5.0V +/-50PPM SMD |
| 3224X-1-503E | TRIMMER 50K OHM 0.25W SMD |
| CE3292-45.000 | OSC 45.000 MHZ 5.0V +/-50PPM SMD |
| MC18FA391J-F | CAP MICA 390PF 100V 5% 1812 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。